首页> 外文OA文献 >Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al 2 O 3 gate dielectrics

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Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al 2 O 3 gate dielectrics

机译：通过原子层沉积Al 2 O 3栅极电介质的原位氟掺杂，控制E模式和D模式硅基GaN硅金属绝缘体半导体异质结构场效应晶体管中的阈值电压

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Roberts, JW; Chalker, PR; Lee, KB; Houston, PA; Cho, SJ; Thayne, IG; Guiney, I; Wallis, D; Humphreys, CJ;
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年度 2016
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1. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al_2O_3 gate dielectrics [J] . J. W. Roberts, P. R. Chalker, K. B. Lee, Applied Physics Letters . 2016,第7期

机译：通过原子层沉积Al_2O_3栅电介质的原位氟掺杂来控制E模式和D模式硅基GaN硅金属绝缘体半导体异质结构场效应晶体管中的阈值电压
2. Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides [J] . Po-Chun Yeh, Yun-Wei Lin, Yue-Lin Huang, Applied physics express . 2015,第8期

机译：在具有光增强化学和等离子体增强原子层沉积氧化物的倒梯形三栅极AlGaN / GaN MOS高电子迁移率晶体管中，由栅极面积和栅极凹槽控制的阈值电压
3. Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200mm Si substrates [J] . Ronchi Nicolo, De Jaeger Brice, Van Hove Marleen, Japanese journal of applied physics . 2015,第4s期

机译：结合等离子体增强原子层沉积栅极电介质和原位SiN覆盖层，可降低200mm Si衬底上AlGaN / GaN高电子迁移率晶体管的阈值电压漂移和动态导通电阻色散
4. The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate [C] . Tian-Li Wu, Marcon Denis, De Jaeger Brice, Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs . 2015

机译：栅极介电质量对在200mm Si衬底上开发无金的D型和E型凹栅AlGaN / GaN晶体管的影响
5. Reactions of high-k gate dielectrics: Studies in hafnium, zirconium, yttrium, and lanthanum-based dielectrics and in-situ infrared results for hafnium dioxide atomic layer deposition. [D] . Kelly, Michael Jason. 2005

机译：高k栅极电介质的反应：在ha，锆，钇和镧基电介质以及二氧化ha原子层沉积的原位红外结果方面的研究。
6. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
7. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics [O] . Roberts J.W., Chalker P.R., Lee K.B., 2016

机译：通过原位氟掺杂原子层沉积al2O3栅极电介质控制E模式和D模式GaN-on-si金属 - 绝缘体 - 半导体异质结构场效应晶体管中的阈值电压
8. Threshold Voltage Drift of InP n-Channel Enhancement Mode Metal-Insulator-Semiconductor Field-Effect Transistors. [R] . Johnson, J. G., Forrest, S. R., Zeisse, C. R., 1988

机译：Inp n沟道增强模式金属 - 绝缘体 - 半导体场效应晶体管的阈值电压漂移。

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al 2 O 3 gate dielectrics

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